skm400gb126d ? by semikron rev. 1.0 C 20.07.2015 1 semitrans ? 3 gb trench igbt modules skm400gb126d features trench = trenchgate technology v ce(sat) with positive temperature coefficient high short circuit capability, self limiting to 6 x i c ul recognized, file no. e63532 typical applications* ac inverter drives ups electronic welders absolute maximum ratings symbol conditions values unit igbtv ces t j =25c 1200 v i c t j = 150 c t c =25c 470 a t c =80c 327 a i cnom 300 a i crm i crm = 2xi cnom 600 a v ges -20 ... 20 v t psc v cc = 600 v v ge 15 v v ces 1200 v t j =125c 10 s t j -40 ... 150 c inverse diode i f t j = 150 c t c =25c 352 a t c =80c 240 a i fnom 300 a i frm i frm = 2xi fnom 600 a i fsm t p = 10 ms, sin 180, t j =25c 2844 a t j -40 ... 150 c module i t(rms) 500 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbtv ce(sat) i c =300a v ge =15v chiplevel t j =25c 1.69 2.10 v t j =125c 2.01 2.45 v v ce0 chiplevel t j =25c 11 . 2v t j =125c 0.9 1.1 v r ce v ge =15v chiplevel t j =25c 2.3 3 m t j =125c 3.7 4.5 m v ge(th) v ge =v ce , i c =12ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 4m a t j =125c ma c ies v ce =25v v ge =0v f=1mhz 21.4 nf c oes f=1mhz 1.12 nf c res f=1mhz 0.97 nf q g v ge = - 8 v...+ 20 v 2800 nc r gint t j =25c 2.5 t d(on) v cc = 600 v i c =300a v ge = +15/-15 v r g on =2 r g off =2 t j =125c 330 ns t r t j =125c 50 ns e on t j =125c 29 mj t d(off) t j =125c 650 ns t f t j =125c 110 ns e off t j =125c 48 mj r th(j-c) per igbt 0.08 k/w
skm400gb126d 2 rev. 1.0 C 20.07.2015 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 300 a v ge =0v chiplevel t j =25c 1.60 1.80 v t j =125c 1.60 1.80 v v f0 chiplevel t j =25c 11 . 1v t j =125c 0.8 0.9 v r f chiplevel t j =25c 2.00 2.3 m t j =125c 2.7 3 m i rrm i f = 300 a di/dt off =6300a/s v ge =-15v v cc = 600 v t j =125c 390 a q rr t j =125c 77 c e rr t j =125c 27 mj r th(j-c) per diode 0.18 k/w module l ce 15 nh r cc'+ee' terminal-chip t c =25c 0.35 m t c =125c 0.5 m r th(c-s) per module 0.02 0.038 k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm nm w 325 g semitrans ? 3 gb trench igbt modules skm400gb126d features trench = trenchgate technology v ce(sat) with positive temperature coefficient high short circuit capability, self limiting to 6 x i c ul recognized, file no. e63532 typical applications* ac inverter drives ups electronic welders
skm400gb126d ? by semikron rev. 1.0 C 20.07.2015 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
skm400gb126d 4 rev. 1.0 C 20.07.2015 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
skm400gb126d ? by semikron rev. 1.0 C 20.07.2015 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semitrans 3 gb
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